Model Question Paper OCET MTech Microelectronics Panjab University : www.exams.puchd.ac.in

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Panjab University
OCET 2011
Subject : M. Tech. (Microelectronics)
Time : 90 minutes Number of Questions : 75 Maximum Marks : 75

Model Question List : http://exams.puchd.ac.in/show-noticeboard.php
Model Question Paper : http://exams.puchd.ac.in/includes/no...228-14-MTM.pdf

1. In a MOS Structure, capacitance in depletion region is :
(A) More than that in inversion region (B) Same as in inversion region
(C) More than that in accumulation region (D) Lesser than that in inversion region

2. Threshold voltage of a MOSFET is :
(A) + for NMOS and – for PMOS (B) – for NMOS and + for PMOS
(C) Same for NMOS and PMOS (D) Not a function of substrate concentration

3. GCA refers to :
(A) Fast variation of electrical field in MOS Channel
(B) Slow variation of electrical field in MOS Channel
(C) Process in short channel MOSFETs
(D) Short Channel Effect

4. High k dielectrics are :
(A) HfO2 (B) Al2O3
(C) Ta2O5 (D) All of the above

5. Mobility of holes is lesser than that of electrons because :
(A) Holes are lighter than electrons
(B) Holes are heavier than electrons
(C) Holes are positively charged and electrons are negatively charged
(D) None of the above

6. Doping density in n-type semiconductor is 1016 cm–3. The best option for this semiconductor is :
(A) Holes are equal to 1016 cm–3 (B) Holes are approximately 104 cm–3
(C) Electrons are approximately 104 cm–3 (D) Holes and electrons are equal

7. Maximum drain current in a MOSFET is in :
(A) Saturation region (B) Linear region
(C) Same everwhere (D) Cutoff region

8. DIBL in a MOSFET :
(A) Reduces subthreshold leakage (B) Increases subthreshold leakage
(C) Has no effect on subthreshold leakage (D) Reduces power dissipation

9. EKV is :
(A) MOSFET Model (B) BJT Model
(C) Short Channel Effect (D) Long Channel Effect

10. Switching speed of a MOSFET is :
(A) Ratio of transconductance and gate input capacitance
(B) Ratio of output resistance and drain voltage
(C) Ratio of gate voltage with drain voltage
(D) Ratio of drain voltage with threshold voltage

11. Heavily doped n-type semiconductor has fermi level :
(A) Very close to conduction band (B) Close to valence band
(C) In mid of bandgap (D) Between intrinsic fermi level and the valence band

12. Thermal voltage at room temperature is :
(A) 25 mV (B) 25V
(C) 0V (D) 1000V

13. In a MOSFET, Weak, Moderate and Strong are the terms associated with :
(A) Depletion Charge Density (B) Inversion Charge Density
(C) Threshold Voltage (D) MOSFET Dimensions

14. As per the Quantum Mechanical Theory, the inversion charge density peaks in the MOSFET :
(A) At the substrate/oxide interface (B) Some distance away from the substrate/ oxide interface in the substrate
(C) Oxide region (D) Polygate region

15. Gate oxide tunneling depends on :
(A) Oxide thickness (B) Oxide/substrate barrier height
(C) Gate to source voltage (D) All of the above